丝印：UN1012N；Package：DFN5x6-8L；N-Channel Enhancement Mode MOSFET

Feature SGT MOSFET Technology 100 Avalanche Tested Reliable and Rugged RoHS compliant Applications DC/DC Converter Battery Management System High power inverter system Industrial and Motor Drive applications

文件：4.3362 Mbytes 页数：9 Pages

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丝印：UN1012N；Package：TO-263；N-Channel Enhancement Mode MOSFET

Feature SGT MOSFET Technology 100 Avalanche Tested Reliable and Rugged RoHS compliant Applications DC/DC Converter Battery Management System High power inverter system Industrial and Motor Drive applications

文件：4.72739 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：UN1012N；Package：TO-220；N-Channel Enhancement Mode MOSFET

Features Pb-free Lead Plating Extremely Low On-Resistance RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) Applications DC/DC Converter Ideal for High-Frequency Switching and Synchronous Rectification

文件：3.79679 Mbytes 页数：8 Pages

UNSEMI

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丝印：UN1016N；Package：TO-263；N-Channel Enhancement Mode MOSFET

Feature Uses advanced SGT technology Extremely low on-resistance RDS(ON) Excellent gate charge x RDS(ON) product(FOM) Applications Motor control and drives Battery management DC/DC converter General purpose applications

文件：4.23686 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：UN1016N；Package：TO-220；N-Channel Enhancement Mode MOSFET

Feature Uses advanced SGT technology Extremely low on-resistance RDS(ON) Excellent gate charge x RDS(ON) product(FOM) Applications Motor control and drives Battery management DC/DC converter General purpose applications

文件：4.38436 Mbytes 页数：9 Pages

UNSEMI

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丝印：UN1021N；Package：TO-263；N-Channel Enhancement Mode MOSFET

Feature Uses advanced SGT technology Extremely low on-resistance RDS(ON) Excellent gate charge x RDS(ON) product(FOM) Applications Motor control and drives Battery management DC/DC converter General purpose applications

文件：4.80161 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：UN1024N；Package：TOLL；N-Channel Enhancement Mode MOSFET

Feature Uses advanced SGT technology Extremely low on-resistance RDS(ON) Excellent gate charge x RDS(ON) product(FOM) Applications Motor control and drives Battery management DC/DC converter General purpose applications

文件：4.43408 Mbytes 页数：9 Pages

UNSEMI

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丝印：UN1032N；Package：TOLL；N-Channel Enhancement Mode MOSFET

Feature Uses advanced SGT technology Extremely low on-resistance RDS(ON) Excellent gate charge x RDS(ON) product(FOM) Applications Motor control and drives Battery management DC/DC converter General purpose applications

文件：4.61233 Mbytes 页数：8 Pages

UNSEMI

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HIGH SPEED SWITCHING TRANSISTOR

FEATURES * Low VCE(SAT) voltage, up to 3A * Suitable for fast switching applications * High current gain

文件：181.31 Kbytes 页数：5 Pages

UTC

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HIGH SPEED SWITCHING TRANSISTOR

FEATURES * Low VCE(SAT) voltage, up to 3A * Suitable for fast switching applications * High current gain

文件：181.31 Kbytes 页数：5 Pages

UTC

友顺