UCC21759-Q1数据手册TI中文资料规格书

描述 Description

The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 990-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 700-VRMS working voltage with longer than 40 years isolation barrier life, 6-kVPK surge immunity, as well as providing low part-to-part skew, and >150-V/ns common mode noise immunity (CMTI).

The UCC21759-Q1 includes the state-of-art protection features, such as fast short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO optimized for SiC and IGBT power transistors. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

特性 Features

• 3-kVRMS single channel isolated gate driver
• AEC-Q100 qualified for automotive applications
• Drives SiC MOSFETs and IGBTs up to 990Vpk
• 33-V maximum output drive voltage (VDD-VEE)
• High peak drive current and high CMTI
• ±10-A drive strength and split output
• 150-V/ns minimum CMTI
• 200-ns response time fast DESAT protection
• 4-A internal active Miller clamp
• 400-mA soft turn-off under fault conditions
• Isolated analog sensor with PWM output for
• Temperature sensing with NTC, PTC or thermal diode
• High voltage DC-Link or phase voltage

• Alarm FLT on over current and reset from RST/EN
• Fast enable/disable response on RST/EN
• Rejects 8mm
• Operating junction temperature –40°C to +150°C
• Safety-related certifications (Planned):
• 6000-VPK basic isolation per DIN V VDE V0884-11: 2017-01
• 3-kVRMS isolation for 1 minute per UL 1577