UCC21755-Q1中文资料具有主动保护和隔离式感应功能的汽车类 ±10A 隔离式单通道栅极驱动器数据手册TI规格书

描述 Description

The UCC21755-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21755-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew , and >150-V/ns common mode noise immunity (CMTI).

The UCC21755-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

特性 Features

• 5.7-kVRMS single-channel isolated gate driver
• Device temperature grade 0: -40°C to +150°C ambient operating temperature range
• Device CDM ESD classification level C6
• Functional Safety Quality-Managed
• SiC MOSFETs and IGBTs up to 2121 Vpk
• ±10-A drive strength and split output
• 200-ns response time fast DESAT protection with 5-V threshold
• 400-mA soft turn-off when fault happens
• Temperature sensing with NTC, PTC, or thermal diode
• Alarm FLT on overcurrent and reset from RST/EN
• Reject 8mm
• Operating junction temperature –40°C to 150°C