UCC21739-Q1中文资料适用于 IGBT/SiC MOSFET 且具有隔离式模拟检测的汽车类 3kVrms ±10A 单通道隔离式栅极驱动器数据手册TI规格书

描述 Description

The UCC21739-Q1 is a galvanic isolated single channel gate drivers designed for SiC MOSFETs and IGBTs up to 990-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21739-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 700-kVRMS working voltage, 6-kVPK surge immunity basic isolation with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150-V/ns common mode noise immunity (CMTI).

The UCC21739-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

特性 Features

• 3-kVRMS single channel isolated gate driver
• SiC MOSFETs and IGBTs up to 990-Vpk
• ±10-A drive strength and split output
• 270-ns response time fast overcurrent protection
• Internal 2-level turn-off when fault happens
• Temperature sensing with NTC, PTC or thermal diode
• Alarm FLT on over current and reset from RST/EN
• Reject
• Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
• SOIC-16 DW package with creepage and clearance distance > 8 mm
• Operating junction temperature –40°C to 150°C