适用于 IGBT/SiC MOSFET 且具有隔离式模拟检测的汽车类 3kVrms ±10A 单通道隔离式栅极驱动器

The UCC21739-Q1 is a galvanic isolated single channel gate drivers designed for SiC MOSFETs and IGBTs up to 990-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21739-Q1 has up to ±10-A peak source and sink current.\n\nThe input side is i • 3-kVRMS single channel isolated gate driver\n• SiC MOSFETs and IGBTs up to 990-Vpk\n• ±10-A drive strength and split output\n• 270-ns response time fast overcurrent protection\n• Internal 2-level turn-off when fault happens\n• Temperature sensing with NTC, PTC or thermal diode \n• Alarm FLT on;

TI

德州仪器

UCC21739-Q1 10-A Source/Sink Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI

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TI

德州仪器

TI

德州仪器

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SOIC-16

TI

德州仪器

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SOP28

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德州仪器

上传：深圳市天卓伟业电子有限公司