UCC21732中文资料适用于 IGBT/SiC FET 且具有 2 级关断的 5.7kVrms ±10A 单通道隔离式栅极驱动器数据手册TI规格书

描述 Description

The UCC21732 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21732 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , >150V/ns common mode noise immunity (CMTI).

The UCC21732 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

特性 Features

• 5.7-kVRMS single channel isolated gate driver
• 33-V maximum output drive voltage (VDD-VEE)
• 150-V/ns minimum CMTI
• Internal 2-level turn-off when fault happens
• Temperature sensing with NTC, PTC or thermal diode
• Alarm FLT on over current and reset from RST/EN
• Reject
• 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
• Operating junction temperature –40°C to 150°C