丝印：C016；Package：PW-Mold；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain : hFE = 400 to 1000 (IC = 0.5 A) (2) Low collector saturation voltage : VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching : tf = 95 ns (typ.)

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isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage : VCEO= 50V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching regulator output applications.

文件：314.75 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：C017；Package：PW-Mold；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • Power Amplifiers • Power Switching Features (1) High DC current gain : hFE = 180 to 450 (IC = 0.5 A) (2) Low collector saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1 A) (3) High-speed switching : tstg = 400 ns (typ.) (IC = 1 A)

文件：487.1 Kbytes 页数：7 Pages

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丝印：4U；Package：PW-Mini；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications • High-Voltage Switching Features (1) High collector voltage: VCEO = 500 V (min) (2) High DC current gain: hFE = 100 to 300 (VCE = 10 V, IC = 20 mA) (3) Low collector-emitter saturation voltage: VCE(sat) = 0.3 V (max) (IC = 20 mA, IB = 2 mA)

文件：291.78 Kbytes 页数：6 Pages

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丝印：3J；Package：PW-Mini；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC = 0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.21 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching: tf = 120 ns (typ.) (IC = 1.6 A)

文件：327.56 Kbytes 页数：7 Pages

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丝印：3F；Package：PW-Mini；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 100 to 200 (VCE = 2 V, IC = 0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.17 V (max) (IC = 1.2 A, IB = 0.12 A) (3) High-speed switching: tf = 70 ns (typ.) (IC = 1.2 A)

文件：287 Kbytes 页数：7 Pages

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丝印：3L；Package：PW-Mini；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 120 to 240 (VCE = 2 V, IC = 0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.15 V (max) (IC = 1.0 A, IB = 0.1 A) (3) High-speed switching: tf = 170 ns (typ.) (IC = 1.0 A)

文件：287.02 Kbytes 页数：7 Pages

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丝印：3N；Package：PW-Mini；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 250 to 500 (VCE = 2 V, IC = 0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max) (IC = 2.0 A, IB = 67 mA) (3) High-speed switching: tf = 50 ns (typ.) (IC = 2.0 A)

文件：499.79 Kbytes 页数：7 Pages

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TELECOMMUNICATION COUPLING TRANSFORMER

文件：255.59 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NTC Thermistors

文件：921.13 Kbytes 页数：9 Pages

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