Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to1000 (IC = 0.1 A) • Low collector-emitter saturation voltage: VCE(sat) = 0.12 V (max) • High-speed switching : tf = 85 ns (typ.)

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丝印：C008；Package：PW-Mold2；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters Features (1) High collector-emitter voltage: VCEO = 285 V, VCES = 600 V (2) High DC current gain: hFE = 100 to 200 (IC = 0.3 A) (3) Excellent switching times: tf = 0.1 μs (typ.)

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TOSHIBA Transistor Silicon NPN Epitaxial Type

○ Power Amplifier Applications ○ Power Switching Applications • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)（ IC = 1A） • High-speed switching: tstg = 0.4 μs (typ.)

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丝印：C011B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • Power Amplifiers • Audio-Frequency Amplifiers Features (1) High collector voltage : VCEO = 230 V (min) (2) Small collector output capacitance : Cob = 20 pF (typ.) (3) High transition frequency : fT = 100 MHz (typ.) (4) Complementary to TTA006B

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Bipolar Transistors Silicon NPN Triple-Diffused Type

Features (1) High speed switching : tf = 0.15 µs (typ.) (IC = 0.5 A) (2) High collector breakdown voltage: VCES = 800 V , VCEO = 375 V Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters

文件：190.31 Kbytes 页数：6 Pages

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丝印：4R；Package：PW-Mini；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications • High-Voltage Switching • LCD Backlighting Features (1) High collector breakdown voltage: VCEO = 350 V (2) High DC current gain: hFE = 100 to 200 (IC = 50 mA)

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丝印：C014；Package：PW-Mold；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters Features (1) High DC current gain : hFE = 100 to 200 (IC = 0.1 A) (2) High collector breakdown voltage : VCEO = 800 V, VCBO = 900 V (3) High-speed switching : tr = 0.2 μs (typ.),

文件：171.05 Kbytes 页数：6 Pages

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丝印：C015B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • Power Amplifiers • Power Switching Features (1) High DC current gain : hFE = 100 to 200 (IC = 0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1A) (3) High-speed switching : tstg = 400 ns (typ.) (IC = 1A) (4) Complementary to TTA008B

文件：218.85 Kbytes 页数：7 Pages

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