Power transistor for high-speed switching applications

Application Scope：High-speed high-voltage switching / Switching regulators / High-speed DC/DC converters\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 1.5 A \nCollector Current ICP 3 A \nCollector power dissipation PC 1.1 W \nCollector-Base Voltage VCBO 600 V \nCollector-emitter voltage VCEO 285 V ;

Toshiba

东芝

丝印：C008；Package：PW-Mold2；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters Features (1) High collector-emitter voltage: VCEO = 285 V, VCES = 600 V (2) High DC current gain: hFE = 100 to 200 (IC = 0.3 A) (3) Excellent switching times: tf = 0.1 μs (typ.)

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TOSHIBA

东芝

Package：TO-251-3 短引线，IPak，TO-251AA；包装：带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 285V 1.5A PW-MOLD2

Toshiba Semiconductor and Storage

5.2Ø x 20 mm

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5.2Ø x 20 mm

文件：151.9 Kbytes 页数：1 Pages

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5.2Ø x 20 mm

文件：151.18 Kbytes 页数：1 Pages

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