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TTC015B

Marking:C015B;Package:TO-126N;Bipolar Transistors Silicon NPN Epitaxial Type

Applications •PowerAmplifiers •PowerSwitching Features (1)HighDCcurrentgain:hFE=100to200(IC=0.5A) (2)Lowcollectoremittersaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) (3)High-speedswitching:tstg=400ns(typ.)(IC=1A) (4)ComplementarytoTTA008B

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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