丝印：C017；Package：PW-Mold；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • Power Amplifiers • Power Switching Features (1) High DC current gain : hFE = 180 to 450 (IC = 0.5 A) (2) Low collector saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1 A) (3) High-speed switching : tstg = 400 ns (typ.) (IC = 1 A)

文件：487.1 Kbytes 页数：7 Pages

TOSHIBA

东芝

丝印：C017AJ；Package：SMC；1500W Transient Voltage Suppressor

文件：598.9 Kbytes 页数：7 Pages

WEEN

瑞能半导体

丝印：C017CJ；Package：SMC；1500W Transient Voltage Suppressor

文件：598.9 Kbytes 页数：7 Pages

WEEN

瑞能半导体