丝印：3J；Package：PW-Mini；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC = 0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.21 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching: tf = 120 ns (typ.) (IC = 1.6 A)

文件：327.56 Kbytes 页数：7 Pages

TOSHIBA

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Power transistor for high-speed switching applications

Application Scope High-speed switching / DC/DC converters \n

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文件：76.29 Kbytes 页数：1 Pages

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金属工业