丝印：C016；Package：PW-Mold；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain : hFE = 400 to 1000 (IC = 0.5 A) (2) Low collector saturation voltage : VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching : tf = 95 ns (typ.)

文件：311.45 Kbytes 页数：6 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage : VCEO= 50V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching regulator output applications.

文件：314.75 Kbytes 页数：2 Pages

ISC

无锡固电

Power transistor for high-speed switching applications

Feature：High hFE / Low saturation voltage\nApplication Scope：DC/DC converters / High-speed switching\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 5 A \nCollector Current ICP 10 A \nCollector power dissipation PC 24 W \nCollector power dissipation PC 1.2 W \nCollector-Base Voltage VCBO 120 V \nCollector-emitter voltage VCEO 50 V ;

Toshiba

东芝

Mirrors for safety light curtains with fastening systems 250 mm - Hp = 160 mm

文件：69.8 Kbytes 页数：2 Pages

SCHNEIDER

施耐德

Recommended hole size is 22.5 mm. Thread front will fit standard 22.5mm hole

文件：45.54 Kbytes 页数：1 Pages

MSPI

马洛里

N-Channel MOSFET uses advanced SGT technology

文件：1.39538 Mbytes 页数：5 Pages

DOINGTER

杜因特