丝印：3L；Package：PW-Mini；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 120 to 240 (VCE = 2 V, IC = 0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.15 V (max) (IC = 1.0 A, IB = 0.1 A) (3) High-speed switching: tf = 170 ns (typ.) (IC = 1.0 A)

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TOSHIBA

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Power transistor for high-speed switching applications

Application Scope High-speed switching / DC/DC converters \n

Toshiba

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