首页 >TL7702BIDR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SwitchedCapacitorVoltageDoublers GeneralDescription TheAME7700seriesofeconomical,Charge-PumpConvertersefficientlydoublea+1.5Vto+5.5Vinputto+3.0Vto+11V,withaworkingcurrentexceeding100mA.Duetotheirsimplicity,smallsize,andperformance,theseCMOSconvertershavenumerousapplications. Features ●Sma | AMEAnalogMicroElectronics，Inc. 安茂安茂微电子 | AME | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription SRFETTMAON7702/LusesadvancedtrenchtechnologywithamonolithicallyintegratedSchottkydiodetoprovideexcellentRDS(ON),andlowgatecharge. ThisdeviceissuitableforuseasalowsideFETinSMPS,loadswitchingandgeneralpurposeapplications. -RoHSCompliant. | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelMOSFETusesadvancedtrenchtechnology Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologytominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.Thesedevicesarewellsuitedforhighefficiencyfastswitchingapplications. Featur | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
30VN-ChannelMOSFET GeneralDescription SRFETTMAON7702AusesadvancedtrenchtechnologywithamonolithicallyintegratedSchottkydiodetoprovideexcellentRDS(ON),andlowgatecharge.ThisdeviceissuitableforuseasalowsideFETinSMPS,loadswitchingandgeneralpurposeapplications. ProductSummary V | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
30VN-ChannelMOSFET GeneralDescription SRFETTMAON7702BusesadvancedtrenchtechnologywithamonolithicallyintegratedSchottkydiodetoprovideexcellentRDS(ON),andlowgatecharge.ThisdeviceissuitableforuseasalowsideFETinSMPS,loadswitchingandgeneralpurposeapplications. ProductSummary V | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription SRFETTMAON7702/LusesadvancedtrenchtechnologywithamonolithicallyintegratedSchottkydiodetoprovideexcellentRDS(ON),andlowgatecharge. ThisdeviceissuitableforuseasalowsideFETinSMPS,loadswitchingandgeneralpurposeapplications. -RoHSCompliant. | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
30VN-CHANNELENHANCEMENTMODEMOSFETWITHSCHOTTKYDIODE | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
PhotomicrosensorwithSlimCable | OMRONOmron Electronics LLC 欧姆龙欧姆龙株式会社 | OMRON | ||
PhotomicrosensorwithSlimCable(Non-modulated) | OMRONOmron Electronics LLC 欧姆龙欧姆龙株式会社 | OMRON | ||
UltraLowOn-Resistance Description HEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesign,thatInternationalRectifieriswellknownfor,providesthedesignerwithanextr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=-12V) Description HEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesign,thatInternationalRectifieriswellknownfor,providesthedesignerwithanextr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFETUltraLowOn-Resistance1.8VRated Description HEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesign,thatInternationalRectifieriswellknownfor,providesthedesignerwithanextr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-ResistanceP-ChannelMOSFETVerySmallSOICPackageLowProfile(1.2mm)AvailableinTape&ReelLead-FreeHalogen-Free | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description HEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesign,thatInternationalRectifieriswellknownfor,providesthedesignerwithanextr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-Resistance Description HEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesign,thatInternationalRectifieriswellknownfor,providesthedesignerwithanextr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-Resistance Description HEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesign,thatInternationalRectifieriswellknownfor,providesthedesignerwithanextr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Precision,CMOSInput,RRIO,WideSupplyRangeAmplifiers | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
LMP7701/LMP7702/LMP7704Precision,CMOSInput,RRIO,WideSupplyRangeAmplifiers | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
Precision,CMOSInput,RRIO,WideSupplyRangeAmplifiers | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
Precision,CMOSInput,RRIO,WideSupplyRangeAmplifiers | TITexas Instruments 德州仪器美国德州仪器公司 | TI |
产品属性
- 产品编号：
TL7702BIDR
- 制造商：
Texas Instruments
- 类别：
集成电路（IC） > 监控器
- 包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
- 类型：
简单复位/加电复位
- 电压 - 阈值：
2.53V
- 输出：
补充型
- 复位：
高有效/低有效
- 复位超时：
标准传输延迟为 270ns
- 工作温度：
-40°C ~ 85°C（TA）
- 安装类型：
表面贴装型
- 封装/外壳：
8-SOIC（0.154"，3.90mm 宽）
- 供应商器件封装：
8-SOIC
- 描述：
IC SUPERVISOR 1 CHANNEL 8SOIC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
2021+ |
SOP8 |
9450 |
原装现货。 |
询价 | ||
TI/德州仪器 |
22+ |
SOP |
58560 |
代理品牌,原装现货,假一罚十 |
询价 | ||
Texas Instruments |
23+ |
SOIC-8 |
12000 |
原装正品现货询价有惊喜 |
询价 | ||
TI(德州仪器) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
TI |
22+ |
SOP8 |
65568 |
代理授权直销,原装现货,长期稳定供应 |
询价 | ||
TI/德州仪器 |
22+ |
SOP-8 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
TI/德州仪器 |
22+ |
8-SOIC |
27075 |
原装正品 |
询价 | ||
TI/德州仪器 |
23+ |
SOP-8 |
6564 |
原装优势公司现货! |
询价 | ||
TI(德州仪器) |
23+ |
8-SOIC |
34123 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
TI(德州仪器) |
23+ |
8-SOIC |
38391 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 |
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