丝印：7702A；Package：DFN-83x3；30V N-Channel MOSFET

General Description SRFETTM AON7702A uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary V

文件：163.28 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Featur

文件：509.67 Kbytes 页数：5 Pages

DOINGTER

杜因特

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

30V N-Channel MOSFET

General Description SRFETTM AON7702B uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary V

文件：316.46 Kbytes 页数：7 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description SRFETTM AON7702/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. - RoHS Compliant.

文件：213.53 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

文件：185.91 Kbytes 页数：8 Pages

DIODES

美台半导体