TGF2023-2-10数据手册Qorvo中文资料规格书

描述 Description

Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz.
The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power gain of 19.8 dB at 3 GHz. The maximum power added efficiency is 69.5% which makes the TGF2023-2-10 appropriate for high efficiency applications.
The part is lead-free and RoHS compliant.

特性 Features

• Frequency range: DC to 14 GHz
• 47.4 dBm nominal Psat at 3 GHz
• 69.5% maximum PAE
• 19.8 dB nominal power gain
• Bias: VD = 12 to 32 V, IDQ = 200 - 1000 mA
• Chip dimensions: 0.82 x 2.48 x 0.10 mm

应用 Application

• Broadband Wireless
• Military
• Space