TGF2023-2-02数据手册Qorvo中文资料规格书

描述 Description

Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power gain of 21 dB at 3 GHz. The maximum power added efficiency is 73.3% which makes the TGF2023-2-02 appropriate for high efficiency applications.
The part is lead-free and RoHS compliant.

特性 Features

• Frequency range: DC to 18 GHz
• 40.1 dBm nominal Psat at 3 GHz
• 73.3% maximum PAE
• 21 dB nominal power gain
• Bias: VD = 12 to 32 V, IDQ= 50 - 250 mA
• Chip dimensions: 0.82 x 0.92 x 0.10 mm

应用 Application

• Broadband Wireless
• Military
• Space