TGF2023-2-02

DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT; • Frequency range: DC to 18 GHz\n• 40.1 dBm nominal Psat at 3 GHz\n• 73.3% maximum PAE\n• 21 dB nominal power gain\n• Bias: VD = 12 to 32 V, IDQ= 50 - 250 mA\n• Chip dimensions: 0.82 x 0.92 x 0.10 mm\n;

Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz.\nThe TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power gain of 21 dB at 3 GHz. The maximum power added efficiency is 73.3% which makes the TGF2023-2-02 appropriate for high efficiency applications.\nThe part is lead-free and RoHS compliant.\n

TGF2023-2-02

12 Watt Discrete Power GaN on SiC HEMT

TGF2023-2-02_15

12 Watt Discrete Power GaN on SiC HEMT

TGL2208-SM

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原厂封装

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TGL2210-SM

QORVO
QFN