TGF2023-2-10

DC - 18 GHz, 50 Watt Discrete Power GaN on SiC HEMT; • Frequency range: DC to 14 GHz\n• 47.4 dBm nominal Psat at 3 GHz\n• 69.5% maximum PAE\n• 19.8 dB nominal power gain\n• Bias: VD = 12 to 32 V, IDQ = 200 - 1000 mA\n• Chip dimensions: 0.82 x 2.48 x 0.10 mm\n;

Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz.\nThe TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power gain of 19.8 dB at 3 GHz. The maximum power added efficiency is 69.5% which makes the TGF2023-2-10 appropriate for high efficiency applications.\nThe part is lead-free and RoHS compliant.\n

TGF2023-2-10

50 Watt Discrete Power GaN on SiC HEMT

TGF2023-2-10

50 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT

TGF2023-2-10_15

50 Watt Discrete Power GaN on SiC HEMT

TGL2208-SM

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