TGF2023-2-05中文资料DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT数据手册Qorvo规格书

描述 Description

Qorvo's TGF2023-2-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The TGF2023-2-05 typically provides 43 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 78.3% which makes the TGF2023-2-05 appropriate for high efficiency applications.
The product is lead-free and RoHS compliant.

特性 Features

• Frequency range: DC to 18 GHz

• 43 dBm nominal Psat at 3 GHz

• 78.3% maximum PAE

• 18 dB nominal power gain

• Bias: Vd = 12 to 32 V, Idq = 100-500 mA

• Chip dimensions: 0.82 x 1.44 x 0.10 mm

应用 Application

• Broadband Wireless
• Military
• Space