25 Watt Discrete Power GaN on SiC HEMT

Product Features Frequency Range: DC - 18 GHz 44.3 dBm Nominal PSAT at 6 GHz 64.4 Maximum PAE at 6 GHz 17.6 dB Linear Gain at 6 GHz Bias: VD = 12 - 32 V, IDQ = 100 - 250 mA Technology: QGaN25 on SiC Chip Dimensions: 0.82 x 1.44 x 0.10 mm

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QORVO

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25 Watt Discrete Power GaN on SiC HEMT

文件：2.92858 Mbytes 页数：19 Pages

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DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT

Qorvo's TGF2023-2-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC to 18 GHz.\nThe TGF2023-2-05 typically provides 43 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 78.3% which makes the TGF2023-2-05 appropriate for high effic • Frequency range: DC to 18 GHz\n • 43 dBm nominal Psat at 3 GHz\n • 78.3% maximum PAE\n • 18 dB nominal power gain\n • Bias: Vd = 12 to 32 V, Idq = 100-500 mA\n • Chip dimensions: 0.82 x 1.44 x 0.10 mm;

Qorvo

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25 Watt Discrete Power GaN on SiC HEMT

文件：2.92858 Mbytes 页数：19 Pages

TriQuint