TDG

Repeat Cycle–ON Time First Relay Output

TDG100E90BEP

丝印：TDG90BE；Package：GaNPX；Bottom-side cooled, 100V E-mode GaN transistor Product Specification

Features •100VenhancementmodeGaNpowerswitch•Bottom-sidecooledconfiguration•RDS(on)=7mΩ•IDS(max)=90A•Ultra-lowFOMIslandTechnology®die•LowinductanceGaNPX®package•Easygatedriverequirements(0Vto6V)•Transienttolerantgatedrive(-20V/+10V)•Veryhighswitchingfrequenc

TDG100E90BEPF

丝印：TDG90BF；Package：GaNPX；Bottom-side cooled, 100V E-mode GaN transistor Product Specification

Features •100VenhancementmodeGaNpowerswitch•Bottom-sidecooledconfiguration•RDS(on)=7mΩ•IDS(max)=90A•Ultra-lowFOMIslandTechnology®die•LowinductanceGaNPX®package•Easygatedriverequirements(0Vto6V)•Transienttolerantgatedrive(-20V/+10V)•Veryhighswitchingfrequenc

TDG2003AP

7CH DARLINGTON SINK DRIVER

7CHDARLINGTONSINKDRIVER TheTD62001P/AP/F/AFSeriesarehigh−voltage,high−currentdarlingtondriverscomprisedofsevenNPNdarlingtonpairs. Allunitsfeatureintegralclampdiodesforswitchinginductiveloads. Applicationsincluderelay,hammer,lampanddisplay(LED)drivers. F

TDG650E60

Bottom- or Top-side Cooled 650 V E-mode GaN FET

Features •650VenhancementmodepowerswitchwithP-GaN gatestructure •Bottom-orTop-sidecooledconfiguration •RDS(on)=25mΩ(typ) •IDS(max)=60A •Ultra-lowFOMIslandTechnology®die •Ultra-lowinductanceGaNPX®package •Easygatedriverequirements(0Vto6V)with7V to

TDG650E601TSP

丝印：61TSE；Package：GaNPX；Space GaN E-mode Transistor Product Specficaton

Features •Classone/LeveloneProductionScreening •LotAcceptanceTestoptionsavailable •650Venhancementmodepowertransistor •Top-cooled,lowinductanceGaNPX®package •RDS(on)=25mΩ •IDS(max)=60A •Ultra-lowFOM •Simplegatedriverequirements(0Vto6V) •Transient

TDG650E601TSPF

丝印：61TSF；Package：GaNPX；Space GaN E-mode Transistor Product Specficaton

Features •Classone/LeveloneProductionScreening •LotAcceptanceTestoptionsavailable •650Venhancementmodepowertransistor •Top-cooled,lowinductanceGaNPX®package •RDS(on)=25mΩ •IDS(max)=60A •Ultra-lowFOM •Simplegatedriverequirements(0Vto6V) •Transient

TDG650E602TSP

丝印：62TSE；Package：GaNPX；Space GaN E-mode Transistor Product Specficaton

Features •Classone/LeveloneProductionScreening •LotAcceptanceTestoptionsavailable •650Venhancementmodepowertransistor •Top-cooled,lowinductanceGaNPX®package •RDS(on)=25mΩ •IDS(max)=60A •Ultra-lowFOM •Simplegatedriverequirements(0Vto6V) •Transient

TDG650E602TSPF

丝印：62TSF；Package：GaNPX；Space GaN E-mode Transistor Product Specficaton

Features •Classone/LeveloneProductionScreening •LotAcceptanceTestoptionsavailable •650Venhancementmodepowertransistor •Top-cooled,lowinductanceGaNPX®package •RDS(on)=25mΩ •IDS(max)=60A •Ultra-lowFOM •Simplegatedriverequirements(0Vto6V) •Transient

TDGD271DEP

丝印：TDGD271DEP；Package：SOIC-8；Single/Dual 4-Amp Isolated Gate Driver with High Transient dV/dt) Immunity

KEYFEATURES •Single,dual,orhigh-side/low-sidedrivers •SinglePWMordualdigitalinputs •HighdV/dtimmunity: •200kV/μsCMTI •400kV/μsLatch-up •Separatepull-up/downoutputsforslew ratecontrol •Widesupplyrange: •Inputsupply:2.5–5.5V •Driversupply:4.2–30V •Ve