Repeat Cycle–ON Time First Relay Output

文件：184.44 Kbytes 页数：1 Pages

ATC

丝印：TDG90BE；Package：GaNPX；Bottom-side cooled, 100V E-mode GaN transistor Product Specification

Features •100 V enhancement mode GaN power switch•Bottom-side cooled configuration•RDS(on) = 7 mΩ•IDS(max) = 90 A•Ultra-low FOM Island Technology® die•Low inductance GaNPX® package•Easy gate drive requirements (0 V to 6 V)•Transient tolerant gate drive (-20 V / +10 V)•Very high switching frequenc

文件：3.00568 Mbytes 页数：19 Pages

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丝印：TDG90BF；Package：GaNPX；Bottom-side cooled, 100V E-mode GaN transistor Product Specification

Features •100 V enhancement mode GaN power switch•Bottom-side cooled configuration•RDS(on) = 7 mΩ•IDS(max) = 90 A•Ultra-low FOM Island Technology® die•Low inductance GaNPX® package•Easy gate drive requirements (0 V to 6 V)•Transient tolerant gate drive (-20 V / +10 V)•Very high switching frequenc

文件：3.00568 Mbytes 页数：19 Pages

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丝印：TDGD271DEP；Package：SOIC-8；Single/Dual 4-Amp Isolated Gate Driver with High Transient dV/dt) Immunity

KEY FEATURES • Single, dual, or high-side/low-side drivers • Single PWM or dual digital inputs • High dV/dt immunity: • 200 kV/μs CMTI • 400 kV/μs Latch-up • Separate pull-up/down outputs for slew rate control • Wide supply range: • Input supply: 2.5–5.5 V • Driver supply: 4.2–30 V • Ve

文件：963.33 Kbytes 页数：30 Pages

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丝印：TDGD274DEP；Package：SOIC-16；Single/Dual 4-Amp Isolated Gate Driver with High Transient dV/dt) Immunity

KEY FEATURES • Single, dual, or high-side/low-side drivers • Single PWM or dual digital inputs • High dV/dt immunity: • 200 kV/μs CMTI • 400 kV/μs Latch-up • Separate pull-up/down outputs for slew rate control • Wide supply range: • Input supply: 2.5–5.5 V • Driver supply: 4.2–30 V • Ve

文件：963.33 Kbytes 页数：30 Pages

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7CH DARLINGTON SINK DRIVER

7CH DARLINGTON SINK DRIVER The TD62001P / AP / F / AF Series are high−voltage, high−current darlington drivers comprised of seven NPN darlington pairs. All units feature integral clamp diodes for switching inductive loads. Applications include relay, hammer, lamp and display (LED) drivers. F

文件：339.75 Kbytes 页数：13 Pages

TOSHIBA

东芝

Bottom- or Top-side Cooled 650 V E-mode GaN FET

Features • 650 V enhancement mode power switch with P-GaN gate structure • Bottom- or Top-side cooled configuration • RDS(on) = 25 mΩ (typ) • IDS(max) = 60 A • Ultra-low FOM Island Technology® die • Ultra-low inductance GaNPX® package • Easy gate drive requirements (0 V to 6 V) with 7V to

文件：2.72795 Mbytes 页数：21 Pages

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丝印：61TSE；Package：GaNPX；Space GaN E-mode Transistor Product Specficaton

Features • Class one / Level one Production Screening • Lot Acceptance Test options available • 650 V enhancement mode power transistor • Top-cooled, low inductance GaNPX® package • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient

文件：1.41116 Mbytes 页数：18 Pages

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丝印：61TSF；Package：GaNPX；Space GaN E-mode Transistor Product Specficaton

Features • Class one / Level one Production Screening • Lot Acceptance Test options available • 650 V enhancement mode power transistor • Top-cooled, low inductance GaNPX® package • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient

文件：1.41116 Mbytes 页数：18 Pages

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丝印：62TSE；Package：GaNPX；Space GaN E-mode Transistor Product Specficaton

Features • Class one / Level one Production Screening • Lot Acceptance Test options available • 650 V enhancement mode power transistor • Top-cooled, low inductance GaNPX® package • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient

文件：1.65443 Mbytes 页数：21 Pages

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