TDG650E601TSP中文资料华特力科数据手册PDF规格书

特性 Features

• Class one / Level one Production Screening

• Lot Acceptance Test options available

• 650 V enhancement mode power transistor

• Top-cooled, low inductance GaNPX® package

• RDS(on) = 25 mΩ

• IDS(max) = 60 A

• Ultra-low FOM

• Simple gate drive requirements (0 V to 6 V)

• Transient tolerant gate drive (-20 V / +10 V)

• Very high switching frequency ( > 10 MHz)

• Fast and controllable fall and rise times

• Reverse conduction capability

• Zero reverse recovery loss

• Small 9 x 7.6 mm2 PCB footprint

• Dual gate pads for optimal board layout

Applications

• Battery management

• Traction Drive

• dc-dc Converters

• Space Motor Drives

• Bridgeless Totem Pole PFC

Description The TDG650E601TSP is a space-grade, 650 V, enhancement mode, GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The part based on GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The TDG650E601TSP is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power space applications. These features combined provide very high efficiency power switching.