TDG100E90BEP中文资料华特力科数据手册PDF规格书

特性 Features

•100 V enhancement mode GaN power switch•Bottom-side cooled configuration•RDS(on) = 7 mΩ•IDS(max) = 90 A•Ultra-low FOM Island Technology® die•Low inductance GaNPX® package•Easy gate drive requirements (0 V to 6 V)•Transient tolerant gate drive (-20 V / +10 V)•Very high switching frequency (> 100 MHz)•Reverse current capability•Zero reverse recovery loss•Small 7.6 x 4.6 mm2 PCB footprint•Source Sense (SS) pin for optimized gate drive•Single diffusion lot available•RoHS compliant•Enhanced wafer level reliability•HiRel qualification flow•Obsolescence support

Applications

•High efficiency power conversio

•High density power conversion

•ac-dc Converters

•Bridgeless Totem Pole PFC

•ZVS Phase Shifted Full Bridge

•Half & Full Bridge topologies

•Synchronous Buck or Boost

•Uninterruptable Power Supplies

•Motor Drives

•Single and 3Φ inverter legs

•Solar and Wind Power

•Fast Battery Charging

•dc-dc Converters

•On Board Battery Chargers

•E-Switch

描述 Description

The TDG100E90BEP is an enhancement mode GaN-on-silicon power transistor based on GaN Systems Technology. The properties of GaN ensure high current, high voltage breakdown combined with high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current performance.

GaNPX® packaging is designed for very low parasitic inductance in the smallest possible footprint. The TDG100E90BEP is a bottom-side cooled transistor that offers very low junction-to- case thermal resistance for demanding high power applications. These features combined

provide very high efficiency power switching.