丝印：TDG90BE；Package：GaNPX；Bottom-side cooled, 100V E-mode GaN transistor Product Specification

Features •100 V enhancement mode GaN power switch•Bottom-side cooled configuration•RDS(on) = 7 mΩ•IDS(max) = 90 A•Ultra-low FOM Island Technology® die•Low inductance GaNPX® package•Easy gate drive requirements (0 V to 6 V)•Transient tolerant gate drive (-20 V / +10 V)•Very high switching frequenc

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丝印：TDG90BF；Package：GaNPX；Bottom-side cooled, 100V E-mode GaN transistor Product Specification

Features •100 V enhancement mode GaN power switch•Bottom-side cooled configuration•RDS(on) = 7 mΩ•IDS(max) = 90 A•Ultra-low FOM Island Technology® die•Low inductance GaNPX® package•Easy gate drive requirements (0 V to 6 V)•Transient tolerant gate drive (-20 V / +10 V)•Very high switching frequenc

文件：3.00568 Mbytes 页数：19 Pages

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DIP

TDPOWER腾达

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0805

TAIYO YUDEN/太阳诱电

上传：深圳市胜励微电子有限公司

MSOP10

MSOP10

上传：深圳市拓亿芯电子有限公司