型号：TDG100E90BEPF；Package：GaNPX；Bottom-side cooled, 100V E-mode GaN transistor Product Specification

Features •100 V enhancement mode GaN power switch•Bottom-side cooled configuration•RDS(on) = 7 mΩ•IDS(max) = 90 A•Ultra-low FOM Island Technology® die•Low inductance GaNPX® package•Easy gate drive requirements (0 V to 6 V)•Transient tolerant gate drive (-20 V / +10 V)•Very high switching frequenc

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TELEDYNETeledyne Technologies Incorporated

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