丝印：SVD9Z24N；Package：TO-220-3L；-12A, -55V P-CHANNEL MOSFET

GENERAL DESCRIPTION SVD9Z24NT is a P-channel enhancement mode power MOS field effect transistor which is produced using Silan planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, an

文件：247.56 Kbytes 页数：7 Pages

SILAN

士兰微

丝印：SVD9Z24N；Package：TO-220-3L；-12A, -55V P-CHANNEL MOSFET

GENERAL DESCRIPTION SVD9Z24NT is a P-channel enhancement mode power MOS field effect transistor which is produced using Silan planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, an

文件：247.56 Kbytes 页数：7 Pages

SILAN

士兰微