SVD9Z24NT中文资料士兰微数据手册PDF规格书

GENERAL DESCRIPTION

SVD9Z24NT is a P-channel enhancement mode power MOS field effect

transistor which is produced using Silan planar VDMOS process. The

improved process and cell structure have been especially tailored to

minimize on-state resistance, provide superior switching performance,

and withstand high energy pulse in the avalanche and commutation

mode. This device is widely used in push-pull amplifier, high-side

switching circuit, CMOS power amplifier.

FEATURES

 -12A, -55V ,RDS(on)(typ.)<175m@VGS=-10V

 P channel

 Low gate charge

 Low Crss

 Fast switching

 Improved dv/dt capability