丝印：SVD9Z24N；Package：TO-220-3L；-12A, -55V P-CHANNEL MOSFET

GENERAL DESCRIPTION SVD9Z24NT is a P-channel enhancement mode power MOS field effect transistor which is produced using Silan planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, an

文件：247.56 Kbytes 页数：7 Pages

SILAN

士兰微

Planar LVMOS

Silan

士兰微

12A, 55V P-CHANNEL POWER MOSFET

文件：155.65 Kbytes 页数：3 Pages

UTC

友顺

POWER MOSFET

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi

文件：174.81 Kbytes 页数：6 Pages

IRF

P-CHANNEL POWER MOSFETs

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tmeperature reliability

文件：287.18 Kbytes 页数：5 Pages

Samsung

三星

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

文件：1.81473 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司