STP24N60M6中文资料N沟道600 V、162 mOhm典型值、17 A MDmesh M6功率MOSFET，TO-220封装数据手册ST规格书

描述 Description

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

特性 Features

• Reduced switching losses
• Lower RDS(on) per area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected

简介

STP24N60M6属于分立半导体产品的晶体管-FETMOSFET-单个。由制造生产的STP24N60M6晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。