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STP24N60DM2中文资料N沟道600 V、0.175 Ohm典型值、18 A MDmesh DM2功率MOSFET，TO-220封装数据手册ST规格书
STP24N60DM2规格书详情
描述 Description
These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
特性 Features
• Extremely low gate charge and input capacitance
• Lower RDS(on)x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
• Extremely high dv/dt and avalanche capabilities
技术参数
- 制造商编号
：STP24N60DM2
- 生产厂家
：ST
- Package
：TO-220AB
- Grade
：Industrial
- VDSS(V)
：600
- RDS(on)_max(@ VGS=10V)(Ω)
：0.2
- Drain Current (Dc)_max(A)
：18
- PTOT_max(W)
：150
- Qg_typ(nC)
：29
- Features
：Fast recovery diode
- Reverse Recovery Time_typ(ns)
：155
- Qrr_typ(nC)
：956
- Peak Reverse Current_nom(A)
：12.5
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO220 |
7850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ST/意法 |
24+ |
NA/ |
3290 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST |
14+ |
TO220 |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法半导体 |
24+ |
TO-220-3 |
16900 |
原装，正品 |
询价 | ||
ST |
17+ |
TO-220 |
99 |
只做原装正品 |
询价 | ||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST/意法 |
25+ |
TO-220 |
32360 |
ST/意法全新特价STP24N60DM2即刻询购立享优惠#长期有货 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法 |
2223+ |
TO220 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 |
