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STP21N65M5中文资料N沟道650 V、0.150 Ohm典型值、17 A MDmesh M5功率MOSFET，TO-220封装数据手册ST规格书
STP21N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
• Worldwide best RDS(on) * area
• Higher VDSS rating
• High dv/dt capability
• Excellent switching performance
• 100% avalanche tested
技术参数
- 制造商编号
：STP21N65M5
- 生产厂家
：ST
- Package
：TO-220AB
- Grade
：Industrial
- VDSS(V)
：650
- RDS(on)_max(@ VGS=10V)(Ω)
：0.179
- Drain Current (Dc)_max(A)
：17
- PTOT_max(W)
：125
- Qg_typ(nC)
：50
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
120 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST |
2016+ |
TO-220AB |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ST/意法 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
ST |
17+ |
TO-220 |
3859 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法半导体 |
24+ |
Through Hole |
16900 |
原装，正品 |
询价 | ||
STM |
23+ |
TO-220-3 |
50000 |
原装正品 支持实单 |
询价 | ||
ST/意法 |
21+ |
NA |
10950 |
只做原装,假一罚十 |
询价 | ||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST/意法半导体 |
23+ |
Through Hole |
12700 |
买原装认准中赛美 |
询价 |
