N-channel 600 V, 162 m typ., 17 A, MDmesh™ M6 Power MOSFET in a TO-220 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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STMICROELECTRONICS

意法半导体

N沟道600 V、162 mOhm典型值、17 A MDmesh M6功率MOSFET，TO-220封装

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one • Reduced switching losses \n• Lower RDS(on) per area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 600V TO220

STMICROELECTRONICS

意法半导体

N-channel 600 V, 162 m typ., 17 A, MDmeshTM M6 Power MOSFET in a TO-247 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：265.27 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体