N沟道600 V、162 mOhm典型值、17 A MDmesh M6功率MOSFET，TO-247封装

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one • Reduced switching losses \n• Lower RDS(on) per area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 600 V, 162 m typ., 17 A, MDmeshTM M6 Power MOSFET in a TO-247 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：265.27 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 600V TO247

STMICROELECTRONICS

意法半导体

N-channel 600 V, 162 m廓 typ., 17 A, MDmesh??M6 Power MOSFET in a D짼PAK

文件：445.35 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel MOSFET

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.19Ω(Max)@VGS= 10V APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS) ·Power Factor Correction (PFC)

文件：317.48 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 162 m typ., 17 A, MDmeshTM M6 Power MOSFET in a TO-220FP package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：265.87 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体