首页>STP24N60M2>规格书详情
STP24N60M2中文资料N沟道600 V、0.168 Ohm典型值、18 A MDmesh M2功率MOSFET,TO-220封装数据手册ST规格书
STP24N60M2规格书详情
描述 Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
特性 Features
• Extremely low gate charge
• Lower RDS(on)x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
技术参数
- 制造商编号
:STP24N60M2
- 生产厂家
:ST
- Package
:TO-220AB
- Grade
:Industrial
- VDSS(V)
:600
- RDS(on)_max(@ VGS=10V)(Ω)
:0.19
- Drain Current (Dc)_max(A)
:18
- PTOT_max(W)
:150
- Qg_typ(nC)
:29
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
21+ |
TO220 |
1709 |
询价 | |||
ST |
17+ |
TO-220 |
128 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法 |
24+ |
TO-220-3 |
1000 |
原装现货,专业配单专家 |
询价 | ||
ST/意法半导体 |
24+ |
TO-220-3 |
16900 |
原装,正品 |
询价 | ||
STM |
23+ |
TO-220 |
50000 |
原装正品 支持实单 |
询价 | ||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
STMICROELECTRONICS |
2023+ |
SMD |
3646 |
安罗世纪电子只做原装正品货 |
询价 | ||
ST |
20+ |
TO220-3 |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 |