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STP12N65M5数据手册ST中文资料规格书
STP12N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietaryvertical process technology, which is combined with STMicroelectronics' well-known PowerMESH™horizontal layout structure. The resulting product has extremely low on-resistance, which isunmatched among silicon-based Power MOSFETs, making it especially suitable for applicationswhich require superior power density and outstanding efficiency.
特性 Features
• Worldwide best RDS(on) * area
• Higher VDSS rating and high dv/dt capability
• Excellent switching performance
• Easy to drive
• 100% avalanche tested
技术参数
- 制造商编号
：STP12N65M5
- 生产厂家
：ST
- Package
：TO-220AB
- Grade
：Industrial
- VDSS(V)
：650
- RDS(on)_max(@ VGS=10V)(Ω)
：0.43
- Drain Current (Dc)_max(A)
：8.5
- PTOT_max(W)
：70
- Qg_typ(nC)
：20
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
23+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST |
23+ |
TO-220 |
12500 |
ST系列在售,可接长单 |
询价 | ||
ST |
21+ |
TO220 |
1638 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
询价 | ||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST全系列 |
25+23+ |
TO-220 |
26178 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-220-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法半导体 |
24+ |
TO-220-3 |
16960 |
原装正品现货支持实单 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220-3 |
12820 |
正规渠道,只有原装! |
询价 |
