STP11NM80数据手册ST中文资料规格书
STP11NM80规格书详情
描述 Description
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
特性 Features
• Low input capacitance and gate charge
• Low gate input resistance
• Best RDS(on)*Qg in the industry
技术参数
- 制造商编号
：STP11NM80
- 生产厂家
：ST
- Package
：TO-220AB
- Grade
：Industrial
- VDSS(V)
：800
- RDS(on)_max(@ VGS=10V)(Ω)
：0.4
- Drain Current (Dc)_max(A)
：11
- PTOT_max(W)
：150
- Qg_typ(nC)
：44
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
16449 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST |
23+ |
NA |
20000 |
全新原装假一赔十 |
询价 | ||
ST |
23+ |
TO220-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法 |
21+ |
TO-220 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法 |
25+ |
TO-220 |
54648 |
百分百原装现货 实单必成 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ST/意法 |
25+ |
TO-220 |
32000 |
ST/意法全新特价STP11NM80即刻询购立享优惠#长期有货 |
询价 | ||
ST |
24+/25+ |
5000 |
原装正品现货库存价优 |
询价 | |||
ST |
19+ |
TO-220 |
590 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
STM |
23+ |
TO-220-3 |
50000 |
原装正品 支持实单 |
询价 |
