STP11NM80中文资料N沟道800 V、0.35 Ohm、11 A MDmesh(TM) 功率MOSFET，TO-220封装数据手册ST规格书
STP11NM80规格书详情
描述 Description
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
特性 Features
• Low input capacitance and gate charge
• Low gate input resistance
• Best RDS(on)*Qg in the industry
技术参数
- 制造商编号
：STP11NM80
- 生产厂家
：ST
- Package
：TO-220AB
- Grade
：Industrial
- VDSS(V)
：800
- RDS(on)_max(@ VGS=10V)(Ω)
：0.4
- Drain Current (Dc)_max(A)
：11
- PTOT_max(W)
：150
- Qg_typ(nC)
：44
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-220 |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
ST/意法 |
25+ |
TO-220 |
54648 |
百分百原装现货 实单必成 |
询价 | ||
ST(意法) |
2511 |
TO-220-3 |
8790 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
询价 | ||
ST |
23+ |
TO220 |
6996 |
只做原装正品现货 |
询价 | ||
ST/意法 |
2023+ |
TO-220 |
5000 |
专注全新正品,优势现货供应 |
询价 | ||
STM |
23+ |
TO-220-3 |
50000 |
原装正品 支持实单 |
询价 | ||
STMicroelectronics |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
ST |
24+ |
TO220-3 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
ST |
24+ |
TO220-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 |
