丝印：90N10F7；Package：PowerFLAT；N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：842.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：842.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：90N3LLH6；Package：PowerFLAT；N-channel 30 V, 0.0038 廓 typ., 24 A STripFET??VI DeepGATE?? Power MOSFET in PowerFLAT??5x6 package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features • RDS(on) * Qg industry benchmark • Extremely low on-resistance

文件：725.82 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：90N6F7；Package：PowerFLAT；N-channel 60 V, 4.6 mΩ typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：505.58 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 60 V, 4.6 mΩ typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：505.58 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：90N10F7；Package：PowerFLAT；N-channel 100 V, 0.007 廓 typ., 70 A STripFET??F7 Power MOSFET in a PowerFLAT??5x6 package

文件：482.03 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 60 V, 0.0046 廓 typ., 90 A STripFET??F7 Power MOSFET in a PowerFLAT??5x6 package

文件：373.26 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N沟道100 V、0.007 Ohm典型值、70 A STripFET F7功率MOSFET，PowerFLAT 5x6封装

该N沟道功率MOSFET利用STripFET F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。 • 市场上最低的RDS(on) \n• 出色的品质因数（FoM） \n• 低Crss/Ciss比，抗EMI \n• 坚固的抗雪崩能力;

ST

意法半导体

N沟道30 V、0.004 Ohm典型值、90 A STripFET H6功率MOSFET，PowerFLAT 5x6封装

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. • RDS(on)* Qgindustry benchmark \n• Extremely low on-resistance RDS(on) \n• High avalanche ruggedness \n• Low gate drive power losses \n• Very low switching gate charge;

ST

意法半导体

N沟道60 V、0.0046 Ohm典型值、90 A STripFET F7功率MOSFET，PowerFLAT 5x6封装

该N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。 • 处于市面上最低的 RDS(on)行列 \n• 出色的品质因数（FoM） \n• 较低的Crss/Ciss 比值使得其具有更强的抗EMI能力 \n• 坚固的抗雪崩能力;

ST

意法半导体