V-Band Full Waveguide Band Phase Noise Analyzer Down-Converter

FEATURES Full Band Coverage APPLICATIONS Frequency Extension Phase Noise Measurements Holzworth HA7062 Phase Noise Analyzers

文件：316.31 Kbytes 页数：3 Pages

ERAVANT

丝印：100N10F7；Package：I2PAK；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

文件：652.33 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

Single-chip worldwide iDTV processor

Description The STi1010 is a highly-integrated, high-performance system-on-chip iDTV processor compliant with worldwide digital TV standards such as ATSC (US), DVB (Europe), ARIB (Japan), DMB-TH (China) and PAL/SECAM/NTSC analog TV standards. The STi1010 provides a cost-optimized solution for iD

文件：134.9 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 620V(Min) -RDS(on) = 0.75Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.51 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：10NM60N；Package：I2PAK；N-channel 600 V, 0.53 Ω typ.,10 A MDmesh™ II Power MOSFET in I²PAK package

Features • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET

文件：702.04 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 6.3A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.45Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching a

文件：358.51 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching wi

文件：530.46 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：I11NM80；Package：I2PAK；N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247

Features ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates th

文件：908.99 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 5.5mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：284.59 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；isc N-Channel Mosfet Transistor

• FEATURES • Drain Current ID= 8.5A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：341.97 Kbytes 页数：2 Pages

ISC

无锡固电