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STGB20H65DFB2数据手册ST中文资料规格书
STGB20H65DFB2规格书详情
描述 Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
特性 Features
• Maximum junction temperature : TJ = 175 °C
• Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
• Very fast and soft recovery co-packaged diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient
技术参数
- 制造商编号
：STGB20H65DFB2
- 生产厂家
：ST
- Package
：D2PAK
- Grade
：Industrial
- VCES_max(V)
：650
- PTOT_max(W)
：147
- Freewheeling diode
：true
- IC_max(@ Tc=25°C)(A)
：40
- IC_max(@ Tc=100°C)(A)
：25
- IF_max(@ Tc=25°C)(A)
：40
- IF_max(@ Tc=100°C)(A)
：23
- VCE(sat)_typ(V)
：1.65
- VF_typ(V)
：1.65
- Qg_typ(nC)
：56
- Eon_typ(mJ)
：0.265
- Eoff_typ(mJ)
：0.214
- Err_typ(µJ)
：293
- Qrr_typ(nC)
：970
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
D2PAK-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法半导体 |
2021+ |
D2PAK-3 |
7600 |
原装现货，欢迎询价 |
询价 | ||
ST(意法半导体) |
24+ |
D2PAK-3 |
1612 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ST/意法半导体 |
23+ |
D2PAK-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST/意法 |
2023+ |
TO-263 |
2000 |
专注全新正品,优势现货供应 |
询价 | ||
ST/意法 |
22+ |
TO-263 |
18000 |
原装正品 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST/意法半导体 |
2020+ |
D2PAK-3 |
7600 |
只做原装正品,卖元器件不赚钱交个朋友 |
询价 | ||
ST/意法 |
22+ |
TO-263 |
9000 |
原装正品,支持实单! |
询价 | ||
ST/意法半导体 |
23+ |
D2PAK-3 |
12700 |
买原装认准中赛美 |
询价 |
