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G10M65DF2

Trenchgatefield-stopIGBT,Mseries650V,10Alow-lossinD²PAKpackage

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheMseries IGBTs,whichrepresentanoptimalbalance betweeninvertersystemperformanceand efficiencywherelow-lossandshort-circuit functionalityareess

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGB10M65DF2

Trenchgatefield-stopIGBT,Mseries650V,10Alowloss

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGB10M65DF2

Trenchgatefield-stopIGBT,Mseries650V,10Alow-lossinD²PAKpackage

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheMseries IGBTs,whichrepresentanoptimalbalance betweeninvertersystemperformanceand efficiencywherelow-lossandshort-circuit functionalityareess

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGF10M65DF2

Trenchgatefield-stopIGBT,Mseries650V,10Alow-lossinTO-220FPpackage

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGP10M65DF2

Trenchgatefield-stopIGBT,Mseries650V,10Alowloss

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGW10M65DF2

Trenchgatefield-stopIGBT,Mseries650V,10Alowloss

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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