isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) -RDS(on) = 2.7Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 500V - 2.4廓 - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH??Power MOSFET

Description The fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and outstanding dc/dt capability with a Fast body-drain recovery diode. Such series complements the FDmesh™ advanced tecnology. ■ 100 avalanche tested ■ Extremely high dv/dt capabili

文件：893.9 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：664.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 2.4W - 3A TO-220/TO-220FP/DPAK/IPAK

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：671.69 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.09125 Mbytes 页数：9 Pages

VBSEMI

微碧半导体