isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.3A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 2.7Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.23 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 2.2 廓, 3.3 A, TO-220FP, DPAK Zener-protected SuperMESH??Power MOSFET

文件：200.79 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET

文件：1.07618 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.3A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 2.7Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.69 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：1.07817 Mbytes 页数：9 Pages

VBSEMI

微碧半导体