N-Channel 100-V (D-S) MOSFET

文件：1.02055 Mbytes 页数：8 Pages

VBSEMI

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N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK

文件：1.43706 Mbytes 页数：18 Pages

STMICROELECTRONICS

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N-Channel MOSFET uses advanced trench technology

文件：1.25587 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel MOSFET uses advanced SGT technology

文件：1.08523 Mbytes 页数：4 Pages

DOINGTER

杜因特

丝印：80N6F6；Package：DPAK；Automotive-grade N-channel 60 V, 4.4 m??typ., 80 A STripFET??VI DeepGATE??Power MOSFET in a DPAK package

文件：676.88 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-Channel 60 V (D-S) 175 째C MOSFET

文件：998.79 Kbytes 页数：8 Pages

VBSEMI

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N沟道100 V、0.0085 Ohm典型值、70 A STripFET F7功率MOSFET，DPAK封装

该器件使用ST专有的STripFET™技术的第七代设计规则，具有新的栅极结构。因而，功率MOSFET在不同封装中都能呈现最低的RDS(on)。 • 极低的栅极电荷 \n• 超低导通电阻 \n• 低栅极输入电阻;

ST

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N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET in a DPAK package

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and • Worldwide best RDS(on) x area \n• Worldwide best FOM (figure of merit) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

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N沟道30 V、2 mOhm典型值、120 A STripFET H6功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET with very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

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