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STD3NA50

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2.4Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAGEINTUBE(SUFFIX”-1”) ■SURFACE-MOUNTINGD

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD3NA50T4

Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

STK3NA50

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP3NA50

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP3NA50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.3A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance; -RDS(on)=3.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP3NA50FI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.3A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance; -RDS(on)=3.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP3NA50FI

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    STD3NA50

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

供应商型号品牌批号封装库存备注价格
ST/意法
24+
TO-252
20000
只做原厂渠道 可追溯货源
询价
ST
05+
原厂原装
15951
只做全新原装真实现货供应
询价
24+
N/A
1800
询价
ST
23+
TO-252
8795
询价
ST
24+
TO-251/252
6430
原装现货/欢迎来电咨询
询价
ST
1709+
TO-252/D-PAK
32500
普通
询价
ST/意法
23+
TO-251
50000
全新原装正品现货,支持订货
询价
ST/意法
23+
TO-251
50000
全新原装正品现货,支持订货
询价
ST/意法
2022+
TO-252
20000
原厂代理 终端免费提供样品
询价
ST
TO-252
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
更多STD3NA50供应商 更新时间2025-7-20 16:36:00