TIP3055

ComplementarySiliconHighPowerTtransistors

PNPTIP2955 NPNTIP3055 DESCRIPTION TheTIP3055isasiliconEpitaxial-BasePlanarNPNtransistormountendinTO-247plasticpackage.Itisintentedforpowerswitchingcircuits,seriesandshuntregulators,outputstagesandhi-fiamplifiers. ThecomplementaryPNPtypeistheTIP295

TIP3055

SiliconNPNPowerTransistors

DESCRIPTION •ExcellentSafeOperatingArea •DCCurrentGain-:hFE=20-70@IC=4A •Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A •ComplementtoTypeTIP2955 APPLICATIONS •Designedforgeneral-purposeswitchingandamplifierapplications.

TIP3055

Complementarypowertransistors

TIP3055

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeTIP2955 ·90Wat25°Ccasetemperature ·15Acontinuouscollectorcurrent APPLICATIONS ·Designedforgeneral–purposeswitchingandamplifierapplications.

TIP3055F

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

TIP3055F

POWERTRANSISTORS

TIP3055G

ComplementarySiliconPowerTransistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices*

TIP3055G

ComplementarySiliconPowerTransistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices*

TIP3055HVF

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

TIP3055T

iscSiliconNPNPowerTransistor

DESCRIPTION •ExcellentSafeOperatingArea •DCCurrentGain-:hFE=20-70@IC=4A •Collector-EmitterSaturationVoltage-:VCE(sat)=0.8V(Max)@IC=4A •ComplementtoTypeTIP2955T APPLICATIONS •Designedforgeneral-purposeswitchingandamplifierapplications.