首页 >STD3055L-VB>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT DESCRIPTION TheSTLC3055isaSLICdevicespecificallydesignedforWLL(WirelessLocalLoop)andISDNTerminalAdaptors.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from+5.5Vto+15.8V)andselfgeneratethenegativebatterybymea | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT Description TheSTLC3055NisaSLICdevicespecificallydesignedforwirelesslocalloop(WLL)andISDNterminaladaptors(ISDN-TA)andVoIPapplications.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from5.5Vto12V)andselfge | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT DESCRIPTION TheSTLC3055isaSLICdevicespecificallydesignedforWLL(WirelessLocalLoop)andISDNTerminalAdaptors.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from+5.5Vto+15.8V)andselfgeneratethenegativebatterybymea | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT DESCRIPTION TheSTLC3055isaSLICdevicespecificallydesignedforWLL(WirelessLocalLoop)andISDNTerminalAdaptors.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from+5.5Vto+15.8V)andselfgeneratethenegativebatterybymea | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
SuperhighdensecelldesignforlowRDS(ON). | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
MEDIUMPOWERLOGICLEVELTMOSFET1.5AMP60VOLTS MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET™ SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSpowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisdeviceisalsodesignedwithalowthresholdvoltagesoi | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
ComplementarySiliconPowerTransistors 15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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