N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET

DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 4

文件：86.83 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET

ST

意法半导体

N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET

DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 4

文件：86.83 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET

DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 4

文件：86.76 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体