N-CHANNEL 600V - 3.3ohm - 2A DPAK / IPAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 3.

文件：283.31 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 3.3ohm - 2A DPAK / IPAK PowerMesh™II MOSFET

ST

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08798 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.9A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 8.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.31 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re finements introduced greatly improve the Ron* area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate harge and ruggedness. ■ TYPICAL RD

文件：334.56 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.9A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 8.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.24 Kbytes 页数：2 Pages

ISC

无锡固电